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1N6077US

¥168.48
单二极管

DIODE GEN PURP 100V 6A D-5B

参数名称参数值
Product StatusActive
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)100 V
Current - Average Rectified (Io)6A
Voltage - Forward (Vf) (Max) @ If1.76 V @ 18.8 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
Current - Reverse Leakage @ Vr5 µA @ 100 V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package/ CaseSQ-MELF, E
Supplier Device PackageD-5B
Operating Temperature - Junction-65°C ~ 155°C

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Microchip Technology 单二极管 产品 1N6077US

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