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1N6625/TR

¥86.72
单二极管

DIODE GEN PURP 1.1KV 1A

参数名称参数值
Product StatusActive
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)1100 V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.75 V @ 1 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)60 ns
Current - Reverse Leakage @ Vr1 µA @ 1100 V
Capacitance @ Vr, F10pF @ 10V, 1MHz
Mounting TypeThrough Hole
Package/ CaseA, Axial
Supplier Device PackageA, Axial
Operating Temperature - Junction-65°C ~ 150°C

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Microchip Technology 单二极管 产品 1N6625/TR

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