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JANTXV1N5618US/TR

¥70.31
单二极管

DIODE GEN PURP 600V 1A D-5A

参数名称参数值
Product StatusActive
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.3 V @ 3 A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)2 µs
Current - Reverse Leakage @ Vr500 nA @ 600 V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package/ CaseSQ-MELF, A
Supplier Device PackageD-5A
Operating Temperature - Junction-65°C ~ 200°C

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Microchip Technology 单二极管 产品 JANTXV1N5618US/TR

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