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1N5417-1

¥34.78
单二极管

DIODE GEN PURP 200V 3A B

参数名称参数值
Product StatusActive
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)200 V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1.5 V @ 9 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)150 ns
Current - Reverse Leakage @ Vr1 µA @ 200 V
Capacitance @ Vr, F-
Mounting TypeThrough Hole
Package/ CaseAxial
Supplier Device PackageB
Operating Temperature - Junction-65°C ~ 175°C

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Microchip Technology 单二极管 产品 1N5417-1

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