参数名称 | 参数值 |
---|---|
Product Status | Last Time Buy |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 12A |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
Capacitance @ Vr, F | 328pF @ 1V, 1MHz |
Mounting Type | Through Hole |
Package/ Case | TO-247-2 |
Supplier Device Package | TO-247-2 |
Operating Temperature - Junction | 175°C |
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WeEn Semiconductors Co., Ltd 单二极管 产品 WNSC12650WQ
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