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FESB8HTHE3_A/P

¥6.42
单二极管

DIODE GEN PURP 500V 8A TO263AB

参数名称参数值
Product StatusActive
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)500 V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.5 V @ 8 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)50 ns
Current - Reverse Leakage @ Vr10 µA @ 500 V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package/ CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB (D²PAK)
Operating Temperature - Junction-55°C ~ 150°C

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Vishay General Semiconductor – Diodes Division 单二极管 产品 FESB8HTHE3_A/P

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