TRS12E65H,S1Q
￥24.19
G3 SIC-SBD 650V 12A TO-220-2L
| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 12 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 120 µA @ 650 V |
| Capacitance @ Vr, F | 778pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package/ Case | TO-220-2 |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | 175°C |
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Toshiba Electronic Devices and Storage Corporation 单二极管 产品 TRS12E65H,S1Q
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