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GB02SHT06-46

¥377.64
单二极管

DIODE SIL CARBIDE 600V 4A TO46

参数名称参数值
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io)4A
Voltage - Forward (Vf) (Max) @ If1.6 V @ 1 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr5 µA @ 600 V
Capacitance @ Vr, F76pF @ 1V, 1MHz
Mounting TypeThrough Hole
Package/ CaseTO-206AB, TO-46-3 Metal Can
Supplier Device PackageTO-46
Operating Temperature - Junction-55°C ~ 225°C

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GeneSiC Semiconductor 单二极管 产品 GB02SHT06-46

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