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RBLQ2MM10TR

¥3.24
单二极管

TRENCH MOS STRUCTURE, 100V, 2A,

参数名称参数值
Product StatusActive
TechnologySchottky
Voltage - DC Reverse (Vr) (Max)100 V
Current - Average Rectified (Io)2A
Voltage - Forward (Vf) (Max) @ If770 mV @ 2 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10 µA @ 100 V
Capacitance @ Vr, F50pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package/ CaseSOD-123F
Supplier Device PackagePMDU
Operating Temperature - Junction175°C

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ROHM Semiconductor 单二极管 产品 RBLQ2MM10TR

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