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S1M-E3/5AT

¥2.66
单二极管

DIODE GEN PURP 1KV 1A DO214AC

参数名称参数值
Product StatusActive
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)1000 V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.1 V @ 1 A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)1.8 µs
Current - Reverse Leakage @ Vr5 µA @ 1000 V
Capacitance @ Vr, F12pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package/ CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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Vishay General Semiconductor – Diodes Division 单二极管 产品 S1M-E3/5AT

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