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BAS316,H3F

¥1.30
单二极管

DIODE GEN PURP 100V 250MA USC

参数名称参数值
Product StatusActive
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)100 V
Current - Average Rectified (Io)250mA
Voltage - Forward (Vf) (Max) @ If1.25 V @ 150 mA
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)3 ns
Current - Reverse Leakage @ Vr200 nA @ 80 V
Capacitance @ Vr, F0.35pF @ 0V, 1MHz
Mounting TypeSurface Mount
Package/ CaseSC-76, SOD-323
Supplier Device PackageUSC
Operating Temperature - Junction150°C (Max)

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Toshiba Electronic Devices and Storage Corporation 单二极管 产品 BAS316,H3F

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