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SE10FGHM3/H

¥3.17
单二极管

DIODE GEN PURP 400V 1A DO219AB

参数名称参数值
Product StatusActive
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)400 V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.05 V @ 1 A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)780 ns
Current - Reverse Leakage @ Vr5 µA @ 400 V
Capacitance @ Vr, F7.5pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package/ CaseDO-219AB
Supplier Device PackageDO-219AB (SMF)
Operating Temperature - Junction-55°C ~ 175°C

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Vishay General Semiconductor – Diodes Division 单二极管 产品 SE10FGHM3/H

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