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RFN10BM3SFHTL

¥7.85
单二极管

DIODE GEN PURP 350V 10A TO252

参数名称参数值
Product StatusActive
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)350 V
Current - Average Rectified (Io)10A
Voltage - Forward (Vf) (Max) @ If1.5 V @ 10 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
Current - Reverse Leakage @ Vr10 µA @ 350 V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252
Operating Temperature - Junction150°C (Max)

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ROHM Semiconductor 单二极管 产品 RFN10BM3SFHTL

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