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RR1VWM6STR

¥2.74
单二极管

DIODE GEN PURP 600V 1A PMDE

参数名称参数值
Product StatusNot For New Designs
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.2 V @ 1 A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10 µA @ 600 V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package/ Case2-SMD, Flat Lead
Supplier Device PackagePMDE
Operating Temperature - Junction175°C (Max)

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ROHM Semiconductor 单二极管 产品 RR1VWM6STR

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