参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Current - Average Rectified (Io) | 30A |
Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 30 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 225 µA @ 1200 V |
Capacitance @ Vr, F | 2272pF @ 0V, 1MHz |
Mounting Type | Through Hole |
Package/ Case | TO-247-2 |
Supplier Device Package | DO-247 LL |
Operating Temperature - Junction | -55°C ~ 175°C |
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