| 参数名称 | 参数值 |
|---|---|
| Product Status | Not For New Designs |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 4A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 4 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
| Capacitance @ Vr, F | 200pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package/ Case | TO-220-2 |
| Supplier Device Package | - |
| Operating Temperature - Junction | 175°C (Max) |
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