参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Current - Average Rectified (Io) | 38A |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 62 µA @ 12 V |
Capacitance @ Vr, F | 29pF @ 800V, 1MHz |
Mounting Type | Surface Mount |
Package/ Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | PG-TO252-2 |
Operating Temperature - Junction | -55°C ~ 150°C |
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Infineon Technologies 单二极管 产品 IDM10G120C5XTMA1
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