参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 20A |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
Capacitance @ Vr, F | 1450pF @ 0V, 1MHz |
Mounting Type | Surface Mount |
Package/ Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263-2 |
Operating Temperature - Junction | -55°C ~ 175°C |
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