VS-3C04ET07S2L-M3
¥19.51
650 V POWER SIC GEN 3 MERGED PIN
参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 4A |
Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 4 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 25 µA @ 650 V |
Capacitance @ Vr, F | 175pF @ 1V, 1MHz |
Mounting Type | Surface Mount |
Package/ Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263AB (D²PAK) |
Operating Temperature - Junction | -55°C ~ 175°C |
新闻资讯
Vishay General Semiconductor – Diodes Division 单二极管 产品 VS-3C04ET07S2L-M3
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