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WND10P08XQ

¥6.41
单二极管

DIODE GEN PURP 800V 10A TO220F

参数名称参数值
Product StatusActive
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)800 V
Current - Average Rectified (Io)10A
Voltage - Forward (Vf) (Max) @ If1.3 V @ 10 A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10 µA @ 800 V
Capacitance @ Vr, F-
Mounting TypeThrough Hole
Package/ CaseTO-220-2 Full Pack, Isolated Tab
Supplier Device PackageTO-220F
Operating Temperature - Junction150°C

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WeEn Semiconductors Co., Ltd 单二极管 产品 WND10P08XQ

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