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RFN1LAM6STR

¥3.10
单二极管

DIODE GEN PURP 600V 800MA PMDTM

参数名称参数值
Product StatusActive
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io)800mA
Voltage - Forward (Vf) (Max) @ If1.45 V @ 800 mA
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
Current - Reverse Leakage @ Vr1 µA @ 600 V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package/ CaseSOD-128
Supplier Device PackagePMDTM
Operating Temperature - Junction150°C (Max)

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ROHM Semiconductor 单二极管 产品 RFN1LAM6STR

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