参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Current - Average Rectified (Io) | 2A |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 1 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
Capacitance @ Vr, F | 131pF @ 1V, 1MHz |
Mounting Type | Surface Mount |
Package/ Case | DO-214AA, SMB |
Supplier Device Package | DO-214AA |
Operating Temperature - Junction | -55°C ~ 175°C |
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GeneSiC Semiconductor 单二极管 产品 GB02SLT12-214
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