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GB02SLT12-214

¥23.04
单二极管

DIODE SIL CARB 1.2KV 2A DO214AA

参数名称参数值
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io)2A
Voltage - Forward (Vf) (Max) @ If1.8 V @ 1 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr50 µA @ 1200 V
Capacitance @ Vr, F131pF @ 1V, 1MHz
Mounting TypeSurface Mount
Package/ CaseDO-214AA, SMB
Supplier Device PackageDO-214AA
Operating Temperature - Junction-55°C ~ 175°C

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GeneSiC Semiconductor 单二极管 产品 GB02SLT12-214

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