参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 6V |
Frequency - Transition | 12GHz |
Noise Figure (dB Typ @ f) | 1.5dB @ 2GHz |
Gain | 8.5dB |
Power - Max | 125mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
Current - Collector (Ic) (Max) | 30mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | SC-75, SOT-416 |
Supplier Device Package | SC-75 (USM) |
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CEL (California Eastern Laboratories) 双极射频晶体管 产品 NE68519-T1-A
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