参数名称 | 参数值 |
---|---|
Product Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 11GHz |
Noise Figure (dB Typ @ f) | 1.3dB @ 1.8GHz |
Gain | 15dB |
Power - Max | 450mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 15mA, 8V |
Current - Collector (Ic) (Max) | 50mA |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | TO-253-4, TO-253AA |
Supplier Device Package | SOT-143B |
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NXP Semiconductors 双极射频晶体管 产品 BFU550VL
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