参数名称 | 参数值 |
---|---|
Product Status | Active |
Transistor Type | 5 NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 8GHz |
Noise Figure (dB Typ @ f) | 3.5dB @ 1GHz |
Gain | - |
Power - Max | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 2V |
Current - Collector (Ic) (Max) | 65mA |
Operating Temperature | -55°C ~ 125°C (TJ) |
Mounting Type | Through Hole |
Package/ Case | 16-CDIP (0.300", 7.62mm) |
Supplier Device Package | 16-CERDIP |
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Harris Corporation 双极射频晶体管 产品 HFA3127MJ/883
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