参数名称 | 参数值 |
---|---|
Product Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 2.8V |
Frequency - Transition | 55GHz |
Noise Figure (dB Typ @ f) | 0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz |
Gain | - |
Power - Max | 197mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 205 @ 2mA, 2V |
Current - Collector (Ic) (Max) | 30mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | SOT-343F |
Supplier Device Package | 4-DFP |
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NXP Semiconductors 双极射频晶体管 产品 BFU730F,115
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