参数名称 | 参数值 |
---|---|
Product Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 3.7V |
Frequency - Transition | 60GHz |
Noise Figure (dB Typ @ f) | 0.65dB @ 3.5GHz |
Gain | 26dB |
Power - Max | 120mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 15mA, 2.5V |
Current - Collector (Ic) (Max) | 40mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | SC-82A, SOT-343 |
Supplier Device Package | PG-SOT343-4-2 |
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Infineon Technologies 双极射频晶体管 产品 BFP842ESDH6327XTSA1
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