参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Transistor Type | 4 PNP (Quad) |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 30mA, 300mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 300mA, 10V |
Power - Max | 650mW |
Frequency - Transition | 200MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package/ Case | 14-DIP (0.300", 7.62mm) |
Supplier Device Package | TO-116 |
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