| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Vce Saturation (Max) @ Ib, Ic | 280mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 170 @ 500mA, 2V |
| Power - Max | 510mW |
| Frequency - Transition | 125MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 6-UFDFN Exposed Pad |
| Supplier Device Package | 6-HUSON (2x2) |
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NXP Semiconductors 双极晶体管阵列 产品 PBSS5130PAP,115
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