参数名称 | 参数值 |
---|---|
Product Status | Active |
Transistor Type | - |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 290mV @ 200mA, 2A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
Power - Max | 510mW |
Frequency - Transition | 120MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 6-UFDFN Exposed Pad |
Supplier Device Package | 6-HUSON (2x2) |
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Nexperia 双极晶体管阵列 产品 PBSS4230PAN,115
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