参数名称 | 参数值 |
---|---|
Product Status | Active |
Transistor Type | 1 PNP Pre-Biased, 1 NPN |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47kOhms, 4.7kOhms |
Resistor - Emitter Base (R2) | 47kOhms, 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V/ 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package/ Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
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ROHM Semiconductor 双极晶体管阵列,预偏置 产品 EMD5T2R
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