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BCR183S

¥0.22

BIPOLAR DIGITAL TRANSISTOR

参数名称参数值
Product StatusActive
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200MHz
Power - Max250mW
Mounting TypeSurface Mount
Package/ CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23-3-11

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Infineon Technologies 双极晶体管阵列,预偏置 产品 BCR183S

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