参数名称 | 参数值 |
---|---|
Product Status | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10kOhms |
Resistor - Emitter Base (R2) | 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package/ Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | PG-SOT23-3-11 |
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Infineon Technologies 双极晶体管阵列,预偏置 产品 BCR183S
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