RN1702,LF
¥2.16
NPNX2 BRT Q1BSR10KOHM Q1BER10KOH
参数名称 | 参数值 |
---|---|
Product Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10kOhms |
Resistor - Emitter Base (R2) | 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package/ Case | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package | USV |
新闻资讯
Toshiba Electronic Devices and Storage Corporation 双极晶体管阵列,预偏置 产品 RN1702,LF
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