参数名称 | 参数值 |
---|---|
Product Status | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2kOhms |
Resistor - Emitter Base (R2) | 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package/ Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
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onsemi 双极晶体管阵列,预偏置 产品 NSBC123JPDXV6T1G
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