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2SB1229T-AA

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单双极晶体管
onsemi

2SB1229 - PNP EPITAXIAL PLANAR S

参数名称参数值
Product StatusObsolete
Transistor TypePNP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)50 V
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 2V
Power - Max750 mW
Frequency - Transition150MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package/ CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package3-NP

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onsemi 单双极晶体管 产品 2SB1229T-AA

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