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FJD5553TM

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单双极晶体管

POWER BIPOLAR TRANSISTOR, 3A, 40

参数名称参数值
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)400 V
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 1A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 400mA, 3V
Power - Max1.25 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252, (D-Pak)

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Fairchild Semiconductor 单双极晶体管 产品 FJD5553TM

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