参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 10V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1dB @ 1GHz |
Gain | 12dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 20mA, 5V |
Current - Collector (Ic) (Max) | 70mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | 3-CP |
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onsemi 双极射频晶体管 产品 2SC5227A-4-TB-E
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