| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Gain | 13dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | TO-253-4, TO-253AA |
| Supplier Device Package | SOT-143 |
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CEL (California Eastern Laboratories) 双极射频晶体管 产品 NE85639-T1-R28-A
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