参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 10V |
Frequency - Transition | 10GHz |
Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
Gain | 9.5dB |
Power - Max | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 6V |
Current - Collector (Ic) (Max) | 35mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | SC-82A, SOT-343 |
Supplier Device Package | - |
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CEL (California Eastern Laboratories) 双极射频晶体管 产品 2SC5013-A
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