参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Frequency - Transition | 2.3GHz |
Noise Figure (dB Typ @ f) | - |
Gain | 8dB |
Power - Max | 5.6W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 100mA, 5V |
Current - Collector (Ic) (Max) | 300mA |
Operating Temperature | 200°C (TJ) |
Mounting Type | Chassis Mount |
Package/ Case | 55BT |
Supplier Device Package | 55BT |
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Microsemi 双极射频晶体管 产品 2301
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