| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Frequency - Transition | 1.03GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 10dB ~ 10.5dB |
| Power - Max | 3400W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 5A, 5V |
| Current - Collector (Ic) (Max) | 80A |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Chassis Mount |
| Package/ Case | 55SW |
| Supplier Device Package | 55SW |
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Microsemi 双极射频晶体管 产品 ITC1100
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