参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5.5V |
Frequency - Transition | 4.5GHz |
Noise Figure (dB Typ @ f) | 1.9dB ~ 2.5dB @ 2GHz |
Gain | - |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 1V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SOT-363 |
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CEL (California Eastern Laboratories) 双极射频晶体管 产品 NE851M03-A
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