参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 10V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1.4dB ~ 1.8dB @ 1GHz ~ 2GHz |
Gain | 10dB ~ 14dB |
Power - Max | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 7mA, 3V |
Current - Collector (Ic) (Max) | 65mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | SOT-523 |
Supplier Device Package | 3-SuperMiniMold (19) |
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CEL (California Eastern Laboratories) 双极射频晶体管 产品 NE68119-T1
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