参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 5GHz |
Noise Figure (dB Typ @ f) | 2.4dB @ 500MHz |
Gain | - |
Power - Max | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 30mA, 5V |
Current - Collector (Ic) (Max) | 35mA |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23 (TO-236AB) |
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NXP Semiconductors 双极射频晶体管 产品 BFT93,215
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