参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1 A |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
Power - Max | 750 mW |
Frequency - Transition | 120MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package/ Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package | TO-92-3 |
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onsemi 单双极晶体管 产品 KSB1116GBU
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