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JANKCCD2N3501

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单双极晶体管

RH SMALL-SIGNAL BJT

参数名称参数值
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)300 mA
Voltage - Collector Emitter Breakdown (Max)150 V
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Power - Max1 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package/ CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39 (TO-205AD)

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Microchip Technology 单双极晶体管 产品 JANKCCD2N3501

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