参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 150 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 6V |
Power - Max | 200 mW |
Frequency - Transition | 180MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | - |
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onsemi 单双极晶体管 产品 2SA1179N6-CPA-TB-E
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