参数名称 | 参数值 |
---|---|
Product Status | Last Time Buy |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 1 A |
Voltage - Collector Emitter Breakdown (Max) | 80 V |
Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1mA, 1A |
Current - Collector Cutoff (Max) | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
Power - Max | 1.5 W |
Frequency - Transition | 200MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | TO-261-4, TO-261AA |
Supplier Device Package | PG-SOT223-4 |
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Infineon Technologies 单双极晶体管 产品 BSP52H6327XTSA1
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