参数名称 | 参数值 |
---|---|
Product Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1 A |
Voltage - Collector Emitter Breakdown (Max) | 60 V |
Vce Saturation (Max) @ Ib, Ic | 235mV @ 100mA, 1A |
Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 230 @ 100mA, 2V |
Power - Max | 325 mW |
Frequency - Transition | 180MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 3-XDFN Exposed Pad |
Supplier Device Package | DFN1010D-3 |
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Nexperia 单双极晶体管 产品 PBSS4160QA-QZ
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