参数名称 | 参数值 |
---|---|
Product Status | Last Time Buy |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 800 mA |
Voltage - Collector Emitter Breakdown (Max) | 45 V |
Vce Saturation (Max) @ Ib, Ic | 450mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
Power - Max | 500 mW |
Frequency - Transition | 170MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | PG-SOT23 |
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Infineon Technologies 单双极晶体管 产品 BCW66KGE6327HTSA1
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